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2SC3356(4G)

TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

2SC3356

TRANSISTOR(NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

PTS9926B

Features
 BVDSS>20V, RDS(ON)=11mΩ(Typ)@VGS=10V
 Low On-Resistance
 Fast Switching
    encapsulation:SOP-8
 Lead-Free,Hg-Free, Green Product
PTS9926B designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.

PTS2017

20V/17A N-Channel Advanced Power MOSFET
Features
• Very Low RDS(on) @ 3.3V Logic.
• 3.3V Logic Level Control
• SOP8 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PT4953B

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -2 0V
RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
Features
High power and current handing capability
Lead free product is acq uired

PTMPD0203

FEATURE
·lndependent Pinout to Each Device to
Each Device to Ease Circuit Design
·High Current Schottky Diode
·Featuring a MOSFET and a
·Schottky Barrier Diode

APPLICATION
·Optinized for Portable Applications Like Cell Phones
Digital Cameras,Media Players,etc
·DC-DC Buck Circuits
·Li-ion Battery Applications
·Color Display and Camera Flash Regulators

PT89S003F


工作电压:2.4V-5.5V
工作温度:-40~85°C
封装:PT89S003FQ20R(QFN20)    PT89S003FX20U(TSSOP20)
内核:高速1T 8051
FIash ROM:16 Kbytes Flash ROM(MOVC禁止寻址0000H~00FFH)可重复写入1万次
IAP:可code option 成0K、0.5K、1K、或16K
EEPROM:独立的128bytes,可重复写入10万次,10年以上保存寿命
SRAM:内部256bytes+外部256bytes
系统时钟(fsys):内建高频16MHz振荡器(FHRC)
作为系统时钟源时,fsys可通过编程器选择设定为16/8/4/1.33MHz
频率误差:跨越(2.9V~5.5V)及(-20~85°C)应用环境,不超过±1%
内置高频晶体振荡器电路
可外接2~16MHz振荡器
作为系统时钟源时,fsys可通过编程器选择使用外接晶振/1/2/4/12这四种分频中的一种
IC系统时钟(fsys)对应的工作电压范围:
>12MHz@2.9~5.5V
≤12MHz@2.4~5.5V

PTN4559

封装形式:PDFN5X6
类型:N+P
ESD Diode:否/否
VDS (V):60/-60
VGS (V):±20/±20
VTH (V)Typ:1.9/-2.5
ID* (A) 25°C:6/-5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:60/75
RDS(ON) (mΩ max) at VGS= 4.5V:80/95
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:风扇

PTS4559

封装形式:SOP8
类型:N+P
ESD Diode:否/否
VDS (V):60/-60
VGS (V):±20/±20
VTH (V)Typ:1.9/-2.5
ID* (A) 25°C:6/-5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:60/75
RDS(ON) (mΩ max) at VGS= 4.5V:80/95
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:风扇

PTS4614

封装形式:SOP8
类型:N+P
ESD Diode:否/否
VDS (V):40/-40
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:7/-6
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:-
RDS(ON) (mΩ max) at VGS= 4.5V:20/35
RDS(ON) (mΩ max) at VGS= 2.5V:30/45
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:风扇

PTS4616

封装形式:SOP8
类型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:8/-7
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:20/28
RDS(ON) (mΩ max) at VGS= 4.5V:25/40
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:风扇

PTF640

封装形式:TO-220F
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:18
PD* (W) 25°C:36
RDS(ON) (mΩ max) at VGS= 10V:0.18
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:HID SMPS

PTP640

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:18
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:0.18
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:HID SMPS

PTS4503

封装形式:SOP8
类型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±12/±16
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:6.5/-5.5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:26/28
RDS(ON) (mΩ max) at VGS= 4.5V:35/45
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:无线充电、移动电源

PTF630

封装形式:TO-220F
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:36
RDS(ON) (mΩ max) at VGS= 10V:0.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:HID SMPS

PTP630

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:0.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: HID SMPS

PTS4606

封装形式:SOP8
类型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:5.8/-5.1
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:31/48
RDS(ON) (mΩ max) at VGS= 4.5V:43/72
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:无线充电、移动电源

PT4606

封装形式:SOP8
类型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:5.8/-6.5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:31/46
RDS(ON) (mΩ max) at VGS= 4.5V:43/72
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:无线充电、移动电源

PTD20N20

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:20
PD* (W) 25°C:45
RDS(ON) (mΩ max) at VGS= 10V:75
RDS(ON) (mΩ max) at VGS= 4.5V:80
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: TV

PTY20N20

封装形式:TO-263
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:20
PD* (W) 25°C:60
RDS(ON) (mΩ max) at VGS= 10V:75
RDS(ON) (mΩ max) at VGS= 4.5V:80
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: TV

PTP20N20

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:20
PD* (W) 25°C:60
RDS(ON) (mΩ max) at VGS= 10V:75
RDS(ON) (mΩ max) at VGS= 4.5V:80
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: TV

PTD10N20

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:3
ID* (A) 25°C:10
PD* (W) 25°C:25
RDS(ON) (mΩ max) at VGS= 10V:135
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: TV

PTP10N20

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:3
ID* (A) 25°C:10
PD* (W) 25°C:30
RDS(ON) (mΩ max) at VGS= 10V:135
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: TV

PTD05N20

封装形式:SOT23-3L
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:5
PD* (W) 25°C:20
RDS(ON) (mΩ max) at VGS= 10V:135
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: LED

PTL02N20

封装形式:SOT23-3L
类型:单N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:2
PD* (W) 25°C:1
RDS(ON) (mΩ max) at VGS= 10V:150
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用: LED

PTD256

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:2
ID* (A) 25°C:19
PD* (W) 25°C:60
RDS(ON) (mΩ max) at VGS= 10V:90
RDS(ON) (mΩ max) at VGS= 4.5V:105
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:TV  LED

PTD254

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:2
ID* (A) 25°C:28
PD* (W) 25°C:45
RDS(ON) (mΩ max) at VGS= 10V:50
RDS(ON) (mΩ max) at VGS= 4.5V:60
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:TV  LED

PTD12N15

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:12
PD* (W) 25°C:30
RDS(ON) (mΩ max) at VGS= 10V:160
RDS(ON) (mΩ max) at VGS= 4.5V:360
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:POE

PTD06N15

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:6
PD* (W) 25°C:16
RDS(ON) (mΩ max) at VGS= 10V:300
RDS(ON) (mΩ max) at VGS= 4.5V:360
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:POE

PTS02N15

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:2
PD* (W) 25°C:2.5
RDS(ON) (mΩ max) at VGS= 10V:300
RDS(ON) (mΩ max) at VGS= 4.5V:360
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:POE

PTP4115

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):150
VGS (V):±25
VTH (V)Typ:3.5
ID* (A) 25°C:100
PD* (W) 25°C:360
RDS(ON) (mΩ max) at VGS= 10V:11.5
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:EBIKE

PTD15N10

封装形式:TO-252
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:15
PD* (W) 25°C:30
RDS(ON) (mΩ max) at VGS= 10V:90
RDS(ON) (mΩ max) at VGS= 4.5V:100
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:Lighting

PTL03N10A

封装形式:SOT23-3L
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:3
PD* (W) 25°C:1.2
RDS(ON) (mΩ max) at VGS= 10V:130
RDS(ON) (mΩ max) at VGS= 4.5V:145
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:Lighting

PTL03N10

封装形式:SOT23
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:2.6
PD* (W) 25°C:1.2
RDS(ON) (mΩ max) at VGS= 10V:165
RDS(ON) (mΩ max) at VGS= 4.5V:180
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:Lighting

PT01N10

封装形式:SOT23
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:1
PD* (W) 25°C:1
RDS(ON) (mΩ max) at VGS= 10V:600
RDS(ON) (mΩ max) at VGS= 4.5V:650
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:Lighting

PTW4110

封装形式:TO-3P
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±25
VTH (V)Typ:3
ID* (A) 25°C:160
PD* (W) 25°C:300
RDS(ON) (mΩ max) at VGS= 10V:5
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:EBIKE

PTP28P10

封装形式:TO-252
类型:单P
ESD Diode:
VDS (V):-100
VGS (V):±20
VTH (V)Typ:-1.9
ID* (A) 25°C:-30
PD* (W) 25°C:120
RDS(ON) (mΩ max) at VGS= 10V:55
RDS(ON) (mΩ max) at VGS= 4.5V:60
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:  General Purpose

PTP4110

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±25
VTH (V)Typ:3
ID* (A) 25°C:160
PD* (W) 25°C:300
RDS(ON) (mΩ max) at VGS= 10V:5
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:EBIKE

PTD28P10

封装形式:TO-252
类型:单P
ESD Diode:
VDS (V):-100
VGS (V):±20
VTH (V)Typ:-1.9
ID* (A) 25°C:-30
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:55
RDS(ON) (mΩ max) at VGS= 4.5V:60
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:  General Purpose

PTY4310

封装形式:TO-220
类型:单N
ESD Diode:
VDS (V):100
VGS (V):±25
VTH (V)Typ:3
ID* (A) 25°C:130
PD* (W) 25°C:256
RDS(ON) (mΩ max) at VGS= 10V:5.5
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型应用:LED

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