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PTW20N50

Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTW9N90

Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
■ Gate Charge (Typical 47nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTU50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTU7N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N60

600V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=600V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU5N65

650V N-Channel MOSFET

Features
●Low Intrin sic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU2N80

HIGH VOLTAGE N-Channel MOSFET
600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP9540

P-Channel Enhancement Mode Power MOSFET
Description
The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

General Features
● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance

Application
● Portable equipment and battery powered systems

PTP8580

Description
The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

General Features
● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP7190

Description
The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP1579

Description
The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTP1550

Description
The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =50A
RDS(ON) <23mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTF50M06

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 33nC)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.

PTP8N60

Features
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

PTP5N65-E

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.7Ω (Max) @VG=10V
●100% Avalanche Tested

PTP2N80

800V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :Qg= 13nC (Typ.)
●BVDSS=800V,ID=3A
●RDS(on) : 5 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP01H11

Description
The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

General Features
● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTP01H10

Description
The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTF12N60

Features
■ RDS(on) (Max 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 50nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTF10N65

Features
■ RDS(on) (Typical 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.

PTF10N60

Features
10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
Low gate charge ( typical 48nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability

PTF8N60

Features
■ RDS(on) (Max 1.2 Ω )@VGS=10V
■ Gate Charge(Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTF5N60

Features
■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■Fast switching
■100% AvalancheTested
■Improved dv/dt capability

General Description

This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

PTF3N80

Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge(Typical 15.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTD7580

Description
The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ:6.5mΩ)
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTD630

200V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 22 nC (Typ.)
●BVDSS=200V,ID=9A
●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
●100% Avalanche Tested

PTD50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTD30P55

DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTD7N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N60

600V N-Channel MOSFET
Features
● Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Extended Safe Operating Area
● Unrivalled Gate Charge : 16 nC (Typ.)
● BVDSS=600V,ID=6A
● Lower RDS(on) : 1.5Ω (Max) @VG=10V
● 100% Avalanche Tested

PTD5N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD5N50

N-Channel MOSFET
Features
■ RDS(on) (Max 1.5Ω) @ VGS=10V
■ GateCharge(Typical 20nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■MaximumJunctionTemperatureRange(150°C)

PTD2N80

HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTR1N60

N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
●TYPICAL RDS(on) = 8 W
●EXTREMELY HIGH dv/dt CAPABILITY
● 100% AVALANCHE TESTED
●GATE CHARGE MINIMIZED
●NEW HIGH VOLTAGE BENCHMARK

APPLICATIONS
●SWITCH MODE LOW POWER SUPPLIES(SMPS)
●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
● LOW POWER BATTERY CHARGERS

PT401

产品描述
PT401是一款用于替代反激变换器中副边肖特基二极管的高性能同步整流控制器。
PT401基于“自适应死区时间控制”技术,可支持连续模式(CCM)、断续模式(DCM)和准谐振工作模式(QR)。同时内部集成参考电压为1.25V的误差放大器,可替代外部TL431,降低了系统成本。
PT401集成欠压保护功能与原副边共通保护功能。

主要特点
●反激拓扑副边同步整流控制器
●支持CCM、DCM和准谐振工作模式
●<300uA超低静态电流
●内置1.25V(±1.5%)参考电压和误差放大器,无需TL431
●集成多种保护
  ■VCC欠压保护(UVLO)
  ■原副边共通保护
●封装类型SOT23-6

典型应用
●工业电源系统
●电池供电系统
●反激适配器

PT35XX

概述
PT35XX是一款用于开关电源的高效率同步整流控制IC。其具备较高的集成度,在有效的提升开关电源的转换效率的同时,减少了外围元器件的应用。
PT35XX可用于DCM/QR开关电源系统。该电路内置45V的功率管,在系统中替代次级肖特基管,并提高整个系统的工作效率。具有开启阀值电压低、开关速度快和反向恢复时间短的特点。
PT35XX具有极低的静态工作损耗和自供电技术。电路采用SOP8的标准封装形式。

特点
支持DCM和QR模式
● 内部集成低内阻的N沟道功率MOSFET
●开关转换速度快、反向恢复时间短
●特有的自供电技术,无需外部电源供电
●内置多重保护
●外围应用器件少
● 静态功耗小

特点
●支持DCM和QR模式
● 内部集成低内阻的N沟道功率MOSFET
●开关转换速度快、反向恢复时间短
●特有的自供电技术,无需外部电源供电
● 内置多重保护
●外围应用器件少
●静态功耗小

应用
●电源适配器、电源转换器等
●小型数码产品的辅助电源等


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