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HT73XX-12V

概述
HT73XX系列是一款实用CMOS技术开发的低压差、高精度输出电压、超低功耗电流的正电压型电压稳压电路。由于内置有低通态电阻晶体管，因而如数输出压差低，同事具有高输入电压承受能力，最高工作电压可达12V，适合需要较高耐压的应用电路。

特点
● 输出电压精度高：精度±3%
● 超低功耗电流：典型值3uA
● 低输出电压温漂：典型值50 ppm/℃
● 高输入耐压：升至12V保持输出稳压
● 封装形式：TO-92、SOT89-3、SOT23-3

应用
● 使用电池供电设备的稳压电源
● 家电玩具的稳压电源
● 便携式医用仪器稳压电源
● 通信设备的稳压电源
● 移动电话用的稳压电源
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HT71XXH-24V

概述
HT71XXH系列是采用CMOS工艺制造，低功耗的高压稳压器，最高输入电压可达25V，输出电压范围为1.5V～12.0V。它具有高精度的输出电压、极低的供电电流、极低的跌落电压等特点。

特点
● 低功耗：≤3μA
● 低跌落电压：典型值0.1V
● 低温漂：典型值50 ppm/℃
● 高的输入电压：最高可达25V
● 高精度的输出电压：容差为+3%
● 封装形式：SOT89-3、SOT23-3 、TO-92

应用
● 电池等电源的供电设备 
● 各种通信设备
● 音频/视频设备 
● 安防监控设备
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PT6006

概述
PT6006是一款脉宽调制降压型电源管理集成电路，其自身具有恒流恒压输出功能，并采用非同步整流降压技术，转换效率最高可达90%。
PT6006内置了线损补偿功能并且提供固定电压输出，同时因为具有可调节的过流保护功能，故其可应用在DC-DC 降压型电源管理应用中。
PT6006内部集成多种保护功能，例如：VDD 过压保护、VDD 欠压锁定、过温保护、过流保护和短路保护功能，其封装采用SOP-8，封装体积小，外围器件少，适用于小体积的电源应用方案。

特点
● 输入电压范围: 8V-36V
● 固定工作频率: 150KHZ
● 固定输出电压：5V
● 最大输出电流： 3.1A
●输出电压精度:  3%
● 输出电流精度:  5%
● 内置可调节线损补偿功能
●内置输出过压保护功能
● 内置输入欠压保护功能
● 内置软启动功能
● 内置过温保护功能
● 内置过流保护功能
●内置输出短路保护功能
● 采用SOP-8 封装

应用
● 车载充电器
● DC-DC 电源
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PT6221

GENERAL DESCRIPTION
The PT6221 is a constant frequency,
6-pin SOT23 current mode step-up converter intended for small, low power
applications. The PT6221 switches at
1MHz and allows the use of tiny, low cost
capacitors and inductors 2mm or less in height. Internal soft-start results in small inrush current and extends battery life.
The PT6221 features automatic shifting
to pulse frequency modulation mode at
light loads. The PT6221 includes
under-voltage lockout, current limiting,
and thermal overload protection to prevent damage in the event of an output overload. The PT6221 is available in a
small 6-pin SOT-23 package.

FEATURES
● Integrated 80mΩ Power MOSFET
● 2V to 24V Input Voltage
● 1MHz Fixed Switching Frequency
● Internal 4A Switch Current Limit
● Adjustable Output Voltage
● Internal Compensation
● Up to 28V Output Voltage
●Automatic Pulse Frequency Modulation
● Mode at Light Loads
● up to 97% Efficiency
● Available in a 6-Pin SOT23-6 Package

APPLICATIONS
●Battery-Powered Equipment
●Set-Top Boxes
●White LED Driver
●DSL and Cable Modems and Routers
●Networking cards powered from PCI or PCI express slots
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PT3306

概述
PT3306是一款高效率、低功耗、低纹波、高工作频率的PFM 同步升压DC/DC 变换器。仅需要三个外围元件，就可将低输入电压升压到所需的工作电压，可通过内部修调电路（步进0.1V）来获得所需的输出电压，内置的同步开关管可使效率最高可达95%，工作于PFM 模式，可有效降低轻载模式下的纹波，具有极低的静态电流特别适合于手持电子设备应用，采用SOT23 封装。

特性
■最高效率：95%
■最高工作频率：300KHZ
■低静态电流：15uA
■输出电压可选：2.5V～3.6V
■输出精度：正负2.5%
■宽输入电压范围：0.9V～3.6V
■低纹波，低噪音

应用领域:
1～2个干电池的电子设备。
电子词典、数码相机、LED手电筒、LED灯、血压计、MP3、遥控玩具、无线耳机、无线鼠标键盘、医疗器械、防丢器、汽车防盗器、充电器、VCR、PDA等手持电子设备。

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PT8822

VDS= 20V
RDS(ON), Vgs@1.8V, Ids@2A = 50mΩ
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.6A = 24mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Ideal for Li ion battery
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PT2010E

N-Channel Enhancement Mode Power MOSFET
Description
The PT2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =7A
RDS(ON) < 27mΩ @ VGS=2.5V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating: 2000V HBM
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●PWM application
●Load switch
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PTY8726

Features
 Low On-Resistance
 Fast Switching
 100% Avalanche Tested
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
Description
PTY8726 designed by the trench process
techniques to achieve extremely low on-resistance.
Additional features of this design can operate at
high junction temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Motor
applications and a wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.
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PTU06N02

Features
• Very Low RDS(on) @ 2.5V Logic.
• V Logic Level Control
• TO-251 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
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PTI03N02

Features
• Very Low RDS(on) @ 2.5V Logic.
• 3.3V Logic Level Control
• TO-262 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
BVDSS 20 V
ID 120 A
RDSON@VGS=4.5V 2.6 mΩ
RDSON@VGS=2.5V 3.8 mΩ
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SI2307

-30V P-Channel Enhancemen t M o d e M O S F E T
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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XP152A12COMR

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.8A＜130mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A＜190mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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XP151A13COMR

20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@3.6A＜85mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A＜115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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XP151A13AOMR

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FDN335N

20V N-Channel Enhancemen t ModeMOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
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FDN306P

-12V P-Channel Enhancemen t ModeMOSFET
Features
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
• Fast switching speed
Applications
• Battery management
• Load switch
• Battery protection
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BSS84

-50V P-Channel Enhancement Mode MOSFET
VDS= -50V
RDS(ON), Vgs@-10V, Ids@-0.1A＜8Ω
RDS(ON), Vgs@-5, Ids@-0.1A ＜10Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

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2SC3356(4G）

TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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2SC3356

TRANSISTOR(NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
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PTS9926B

Features
 BVDSS＞20V, RDS(ON)=11mΩ(Typ)@VGS=10V
 Low On-Resistance
 Fast Switching
    encapsulation：SOP-8
 Lead-Free,Hg-Free, Green Product
PTS9926B designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.
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PTS2017

20V/17A N-Channel Advanced Power MOSFET
Features
• Very Low RDS(on) @ 3.3V Logic.
• 3.3V Logic Level Control
• SOP8 Package
• Pb−Free, RoHS Compliant
Applications
• Low Side Load Switch
• Battery Switch
• Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others
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PT4953B

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -2 0V
RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
Features
High power and current handing capability
Lead free product is acq uired
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PTMPD0203

FEATURE
·lndependent Pinout to Each Device to
Each Device to Ease Circuit Design
·High Current Schottky Diode
·Featuring a MOSFET and a
·Schottky Barrier Diode

APPLICATION
·Optinized for Portable Applications Like Cell Phones
Digital Cameras,Media Players,etc
·DC-DC Buck Circuits
·Li-ion Battery Applications
·Color Display and Camera Flash Regulators
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PT89S003F


工作电压：2.4V-5.5V
工作温度：-40~85°C
封装：PT89S003FQ20R(QFN20)    PT89S003FX20U(TSSOP20)
内核：高速1T 8051
FIash ROM：16 Kbytes Flash ROM(MOVC禁止寻址0000H~00FFH)可重复写入1万次
IAP：可code option 成0K、0.5K、1K、或16K
EEPROM：独立的128bytes，可重复写入10万次，10年以上保存寿命
SRAM：内部256bytes+外部256bytes
系统时钟（fsys）：内建高频16MHz振荡器（FHRC）
作为系统时钟源时，fsys可通过编程器选择设定为16/8/4/1.33MHz
频率误差：跨越（2.9V~5.5V）及（-20~85°C）应用环境，不超过±1%
内置高频晶体振荡器电路
可外接2~16MHz振荡器
作为系统时钟源时，fsys可通过编程器选择使用外接晶振/1/2/4/12这四种分频中的一种
IC系统时钟（fsys）对应的工作电压范围：
＞12MHz@2.9~5.5V
≤12MHz@2.4~5.5V

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PTN4559

封装形式：PDFN5X6
类型：N+P
ESD Diode：否/否
VDS (V)：60/-60
VGS (V)：±20/±20
VTH (V)Typ：1.9/-2.5
ID* (A) 25°C：6/-5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：60/75
RDS(ON) (mΩ max) at VGS= 4.5V：80/95
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：风扇
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PTS4559

封装形式：SOP8
类型：N+P
ESD Diode：否/否
VDS (V)：60/-60
VGS (V)：±20/±20
VTH (V)Typ：1.9/-2.5
ID* (A) 25°C：6/-5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：60/75
RDS(ON) (mΩ max) at VGS= 4.5V：80/95
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：风扇
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PTS4614

封装形式：SOP8
类型：N+P
ESD Diode：否/否
VDS (V)：40/-40
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：7/-6
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：-
RDS(ON) (mΩ max) at VGS= 4.5V：20/35
RDS(ON) (mΩ max) at VGS= 2.5V：30/45
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：风扇
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PTS4616

封装形式：SOP8
类型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：8/-7
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：20/28
RDS(ON) (mΩ max) at VGS= 4.5V：25/40
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：风扇
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PTF640

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：18
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：0.18
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：HID SMPS
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PTP640

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：18
PD* (W) 25°C：90
RDS(ON) (mΩ max) at VGS= 10V：0.18
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：HID SMPS
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PTS4503

封装形式：SOP8
类型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±12/±16
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：6.5/-5.5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：26/28
RDS(ON) (mΩ max) at VGS= 4.5V：35/45
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：无线充电、移动电源
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PTF630

封装形式：TO-220F
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：9
PD* (W) 25°C：36
RDS(ON) (mΩ max) at VGS= 10V：0.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：HID SMPS
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PTP630

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±30
VTH (V)Typ：4
ID* (A) 25°C：9
PD* (W) 25°C：90
RDS(ON) (mΩ max) at VGS= 10V：0.4
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用： HID SMPS
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PTS4606

封装形式：SOP8
类型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：5.8/-5.1
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：31/48
RDS(ON) (mΩ max) at VGS= 4.5V：43/72
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：无线充电、移动电源
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PT4606

封装形式：SOP8
类型：N+P
ESD Diode：否/否
VDS (V)：30/-30
VGS (V)：±20/±20
VTH (V)Typ：1.6/-1.6
ID* (A) 25°C：5.8/-6.5
PD* (W) 25°C：2月2日
RDS(ON) (mΩ max) at VGS= 10V：31/46
RDS(ON) (mΩ max) at VGS= 4.5V：43/72
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用：无线充电、移动电源
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PTD20N20

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：20
PD* (W) 25°C：45
RDS(ON) (mΩ max) at VGS= 10V：75
RDS(ON) (mΩ max) at VGS= 4.5V：80
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用： TV
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PTY20N20

封装形式：TO-263
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：20
PD* (W) 25°C：60
RDS(ON) (mΩ max) at VGS= 10V：75
RDS(ON) (mΩ max) at VGS= 4.5V：80
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用： TV
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PTP20N20

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：1.8
ID* (A) 25°C：20
PD* (W) 25°C：60
RDS(ON) (mΩ max) at VGS= 10V：75
RDS(ON) (mΩ max) at VGS= 4.5V：80
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用： TV
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PTD10N20

封装形式：TO-252
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：3
ID* (A) 25°C：10
PD* (W) 25°C：25
RDS(ON) (mΩ max) at VGS= 10V：135
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用： TV
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PTP10N20

封装形式：TO-220
类型：单N
ESD Diode：否
VDS (V)：200
VGS (V)：±20
VTH (V)Typ：3
ID* (A) 25°C：10
PD* (W) 25°C：30
RDS(ON) (mΩ max) at VGS= 10V：135
RDS(ON) (mΩ max) at VGS= 4.5V：-
RDS(ON) (mΩ max) at VGS= 2.5V：-
RDS(ON) (mΩ max) at VGS= 1.8V：-
典型应用： TV
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